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BSS138-7-f MOSFET N-Channel 50V 200mA/0.2A SOT-23/SC-59 marking k38 avalanche rating/logic level
最大源漏极电压Vds Drain-Source Voltage | 50V |
最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
最大漏极电流Id Drain Current | 200mA/0.2A |
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 3.5Ω/Ohm @220mA,10V |
开启电压Vgs(th) Gate-Source Threshold Voltage | 0.5-1.5V |
耗散功率Pd Power Dissipation | 300mW/0.3W |
Description & Applications | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage |
描述与应用 | N沟道增强型场效应 晶体管 低导通电阻 低栅极阈值电压 低输入电容 开关速度快 低输入/输出漏 |