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FDC6020C Complex FET 20V/-20V 5.9A/-4.2A SOT-163/SOT23-6/SSOT-6 marking 020C DC/ DC converter load switch motor drive

Price (excluding freight):
Batches(PCS):
$0.288
≤99
$0.259
≤499
$0.216
≤999
$0.187
≤2999
$0.173
FCL

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Product description
最大源漏极电压Vds
Drain-Source Voltage
20V/-20V
最大栅源极电压Vgs(±)
Gate-Source Voltage
12V/12V
最大漏极电流Id
Drain Current
5.9A/-4.2A
源漏极导通电阻Rds
Drain-Source On-State Resistance
39mΩ@ VGS = 4.5V, ID = 5.9A/73mΩ@ VGS = 4.5V, ID = 4.2A
开启电压Vgs(th)
Gate-Source Threshold Voltage
0.6~1.5V/-0.6~-1.5V
耗散功率Pd
Power Dissipation
1.6W
Description & ApplicationsComplementary Power Trench MOSFET General Description These N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced Power Trench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Applications • DC/DC converter • Load switch • Motor Driving Features • Low gate charge • High performance trench technology for extremely low RDS(ON) • FLMP SSOT-6 package
描述与应用互补功率沟槽MOSFET 概述 这些N&P沟道MOSFET的生产采用飞兆半导体先进的功率沟槽进程,已特别是针对减少通态电阻,同时保持出色的开关性能。 这些器件非常适合于低电压和电池供电应用的低线的功率损耗和快速开关是必需的。 应用 •DC/ DC转换器 •负荷开关 •电机驱动 特点 •低栅极电荷 •高性能沟道技术极低的RDS(ON) •FLMP SSOT-6封装
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