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SI1021R-T1-GE3 MOSFET P-Channel -60V -190mA 4ohm SOT-523 marking FWA low on-resistance power MOSFET 2000VESD protection
| 最大源漏极电压Vds Drain-Source Voltage | -60V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | -190mA/-0.19A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | 4Ω @-500mA,-10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | -1--3V |
| 耗散功率Pd Power Dissipation | 250mW/0.25W |
| Description & Applications | FEATURES • Halogen-free Option Available • TrenchFET Power MOSFETs • High-Side Switching • Low On-Resistance: 4 Ω • Low Threshold: - 2 V (typ.) • Fast Switching Speed: 20 ns (typ.) • Low Input Capacitance: 20 pF (typ.) • Miniature Package • ESD Protected: 2000 V |
| 描述与应用 | •无卤股权 •的TrenchFET 功率MOSFET •高边开关 •低导通电阻：4Ω •低阈值： - 2 V（典型值） •开关速度快：20 ns（典型值） •低输入电容20 PF（典型值） •微型包装 •ESD保护：2000 V |
