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SI1021R-T1-GE3 MOSFET P-Channel -60V -190mA 4ohm SOT-523 marking FWA low on-resistance power MOSFET 2000VESD protection

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Product description
最大源漏极电压Vds
Drain-Source Voltage
-60V
最大栅源极电压Vgs(±)
Gate-Source Voltage
20V
最大漏极电流Id
Drain Current
-190mA/-0.19A
源漏极导通电阻Rds
Drain-Source On-State
Resistance
4Ω @-500mA,-10V
开启电压Vgs(th)
Gate-Source Threshold Voltage
-1--3V
耗散功率Pd
Power Dissipation
250mW/0.25W
Description & ApplicationsFEATURES • Halogen-free Option Available • TrenchFET Power MOSFETs • High-Side Switching • Low On-Resistance: 4 Ω • Low Threshold: - 2 V (typ.) • Fast Switching Speed: 20 ns (typ.) • Low Input Capacitance: 20 pF (typ.) • Miniature Package • ESD Protected: 2000 V
描述与应用 •无卤股权 •的TrenchFET 功率MOSFET •高边开关 •低导通电阻:4Ω •低阈值: - 2 V(典型值) •开关速度快:20 ns(典型值) •低输入电容20 PF(典型值) •微型包装 •ESD保护:2000 V
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