2sk18600T2MC MOSFET N-Channel 20V SOT-23/SC-59 marking 1H T Low noise voltage of NV/impedance conversion in low frequency|Welcome to Eric Online Store - Shenzhen ERIC Electronics Co., Ltd.

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2sk18600T2MC MOSFET N-Channel 20V SOT-23/SC-59 marking 1H T Low noise voltage of NV/impedance conversion in low frequency

Model：2sk18600T2MC
Mark / screen / code / typing：1H T
Manufacturer：
Date Code：05nopb 05+PB210K
Package：SOT-23/SC-59
Standard Package：3000
Min Order：10

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Product description

最大源漏极电压Vds Drain-Source Voltage	20v
栅源极击穿电压V(BR)GS Gate-Source Voltage	-20v
漏极电流(Vgs=0V)IDSS Drain Current	0.095~0.48ma
关断电压Vgs(off) Gate-Source Cut-off Voltage	-2~-5v
耗散功率Pd Power Dissipation	200mW/0.2W
Description & Applications	•Silicon N-Channel Junction FET •For impedance conversion in low frequency For electret capacitor microphone Features • High mutual conductance gm • Low noise voltage of NV
描述与应用	•硅N沟道结型场效应管 •对于低频阻抗转换中对于驻极体电容式麦克风特点 •高互导GM •低噪声电压的NV

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