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SI3911DV-T3-E3 Complex FET -20V -1.8A SOT-163/SOT23-6/TSOP-6 marking 11

Model：SI3911DV-T3-E3
Mark / screen / code / typing：11
Manufacturer：
Date Code：06+10Knopb 06+NOPB370KM
Package：SOT-163/SOT23-6/TSOP-6
Standard Package：3000
Min Order：10

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Product description

最大源漏极电压Vds Drain-Source Voltage	-20V
最大栅源极电压Vgs(±) Gate-Source Voltage	-8V
最大漏极电流Id Drain Current	-1.8A
源漏极导通电阻Rds Drain-Source On-State Resistance	300mΩ@ VGS = -1.8V, ID = -1A
开启电压Vgs（th） Gate-Source Threshold Voltage	-0.45V
耗散功率Pd Power Dissipation	830mW/0.83W
Description & Applications	Dual P-Channel 20-V (D-S) MOSFET
描述与应用	双P沟道20-V（D-S）的MOSFET

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