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XN4608 NPN+PNP Complex Bipolar Transistor 60V/-15V 100mA/-500mA 160~460/100~350 SOT-163/SC-74 marking 5E switch and digital circuit application
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 60V/-15V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 50V/-10V |
| 集电极连续输出电流IC Collector Current(IC) | 100mA/-500mA |
| 截止频率fT Transtion Frequency(fT) | 150MHz/130MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 160~460/100~350 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | 100mV/-160mV |
| 耗散功率Pc Power Dissipation | 300mW |
| Description & Applications | Features • Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) • Two elements incorporated into one package. • Reduction of the mounting area and assembly cost by one half. Applications • For general amplification (Tr1) • For amplification of low frequency output (Tr2) 2SD601A+2SB970 |
| 描述与应用 | 特点 •NPN硅外延的刨床晶体管（TR1）硅PNP外延刨床晶体管的（TR2） •两个要素纳入一包装。 •减少安装面积和汇编一半的费用。 应用 •对于一般的放大（TR1） •放大低频输出（TR2）2SD601A+2SB970 |
