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2SC3649S NPN Transistors(BJT) 180V 1.5A 120MHz 140~280 450mV/0.45V SOT-89/PCP marking CES high voltage switch

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
180V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
160V
集电极连续输出电流IC
Collector Current(IC)
1.5A
截止频率fT
Transtion Frequency(fT)
120MHz
直流电流增益hFE
DC Current Gain(hFE)
140~280
管压降VCE(sat)
Collector-Emitter Saturation Voltage
450mV/0.45V
耗散功率Pc
Power Dissipation
500mW/0.5W
Description & ApplicationsNPN epitaxial planar Silicon Transistors High-Voltage Switching applications High breakdown voltage and large current capacity Very small size making it easy to provide high-density. Complementary to 2SA1419
描述与应用NPN外延平面硅晶体管 高电压开关应用 高击穿电压和大电流的能力 非常小的尺寸使其易于提供高密度。 互补型2SA1455K
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