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2SK23800S MOSFET N-Channel SOT-523 marking EBS impedance conversion in low frequency
| 最大源漏极电压Vds Drain-Source Voltage | |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | |
| 最大漏极电流Id Drain Current | |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | |
| 耗散功率Pd Power Dissipation | |
| Description & Applications | Silicon N-Channel Junction FET For impedance conversion in low frequency For infrared sensor Features Silicon N-Channel Junction FET For impedance conversion in low frequency For infrared sensor Low gate to source leakage current, IGSS Small capacitance of Ciss, Coss, Crss SS-mini type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing |
| 描述与应用 | 硅N沟道结型场效应管 在低频率的阻抗变换 红外传感器 特性 硅N沟道结型场效应管 在低频率的阻抗变换 红外传感器 低栅极，源漏电流，IGSS 小电容Coss，Ciss，Crss SS-迷你型包装，使瘦身套和通过自动插入磁带/盒包装 |
