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S-1170B18UC LDO Voltage Regulator 1.8V 200mV/0.2V With Enable Pin SOT89-5 marking OTD Short-Circuit Protection Over-Temperature Protection

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Product description
电路数量
Number of Regulators
1
输入电压VIN
Voltage - Input
0.3~7V
输出电压VOUT
Voltage - Output
1.8V
输出电流Io
Current - Output
300mA/0.3A
最大压降VDO
Voltage - Dropout
200mV/0.2V
带使能脚EN/CE(ON/OFF功能)
With Enable Pin
有 Yes
最大耗散功率Pd
Power dissipation
1W
Description & ApplicationsHIGH RIPPLE-REJECTION AND LOW DROPOUT HIGH OUTPUT CURRENT CMOS VOLTAGE REGULATOR ;•Output voltage: 1.5 V to 5.5 V, selectable in 0.1 V steps. • High-accuracy output voltage: ±1.0% • Low dropout voltage: 120 mV typ. (3.0 V output product, IOUT = 300 mA) • Low current consumption: During operation: 80 μA typ., 160 μA max. During shutdown: 0.1 μA typ., 1.0 μA max. • High current capability: 800 mA output is possible (at VIN ≥ VOUT(S) + 1.0 V) • Built-in ON/OFF circuit: Ensures long battery life. • Low ESR capacitor can be used: A ceramic capacitor of 4.7 μF or more can be used for the output capacitor. • High ripple rejection: 70 dB typ. (at 1.0 kHz) • Built-in overcurrent protector: Overcurrent of output transistor can be restricted. • Built-in thermal shutdown circuit: Damage caused by heat can be prevented.
描述与应用高纹波抑制率低压差 高输出电流CMOS电压稳压器;•输出电压:1.5 V至5.5 V,0.1 V步骤选择。 •高输出电压精度:±1.0% •低压差电压:120 mV典型。 (3.0 V输出产品,IOUT= 300 mA时) •低电流消耗:在操作过程中:80μA(典型值),最大160μA。 休眠时:0.1μA(典型值),1.0μA最大值。 •高电流能力:800 mA输出是可能的(在VIN≥VOUT(S)+1.0 V) •内置开/关控制电路,确保电池寿命长。 •可以使用低ESR电容:4.7μF以上的陶瓷电容器可用于输出电容。 •高纹波抑制:70 dB(典型值)。 (1.0千赫) •内置过载电流保护:可以限制输出晶体管的过载电流。 •内置热关断电路:由热所造成的损害是可以预防的。
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