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EMB19 PNP+PNP Complex Bipolar Digital Transistor -50V -30mA 150mW/0.15W SOT-563/EMT6 marking B19 switching inverting interface driver circuit
V(BR) CBO Collector-Base Voltage |
-50V |
V(BR) CEO Collector-Emitter Voltage |
-50V |
Collector Current(IC) | -30MA |
Input Resistance(R1) | 100KΩ |
Base-Emitter Resistance(R2) | 100KΩ |
Base-Emitter Input Resistance Ratio (R1/R2) | 1 |
DC Current Gain(hFE) | |
Transtion Frequency(fT) | 250MHZ |
Power Dissipation (Pd) | 0.15W |
Description & Applications | 1) Two DTA115E chips in a EMT package
2) Dual PNP silicon transistor (each with two built in resistors)
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Technical Documentation Download | Read Online |