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HM14 NPN Transistors(BJT) 30V 300mA/0.3A 125MHz 200000 1.5V SOT-89 marking HM14 darlington amplifier
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 30V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 30V |
集电极连续输出电流IC Collector Current(IC) | 300mA/0.3A |
截止频率fT Transtion Frequency(fT) | 125MHz |
直流电流增益hFE DC Current Gain(hFE) | 200000 |
管压降VCE(sat) Collector-Emitter Saturation Voltage | 1.5V |
耗散功率Pc Power Dissipation | 1W |
Description & Applications | NPN EPITAXIAL PLANAR TRANSISTOR The HM14 is a darlington amplifier transistor designed for applications requiring extremely high current gain. High D.C current gain HM14 is complementary to HM64 |
描述与应用 | NPN外延平面晶体管 HM14是一个专为达林顿晶体管放大器 应用要求非常高的电流增益。 高D.C电流增益 HM14 HM64互补 |