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TPCF8101 MOSFET P-Channel -12V -6A 28mohm vs-8 marking F3A portable equipment application low leakage current low on-resistance

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Product description
最大源漏极电压Vds
Drain-Source Voltage
-12V
最大栅源极电压Vgs(±)
Gate-Source Voltage
8V
最大漏极电流Id
Drain Current
-6A
源漏极导通电阻Rds
Drain-Source On-State
Resistance
28mΩ@ VGS = -4.5V, ID = -3A
开启电压Vgs(th)
Gate-Source Threshold Voltage
-0.5~-1.2V
耗散功率Pd
Power Dissipation
2.5W
Description & ApplicationsTOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) Notebook PC Applications Portable Equipment Applications • Low drain-source ON resistance: RDS (ON) = 22 mΩ (typ.) • High forward transfer admittance: |Yfs| = 14 S (typ.) • Low leakage current: IDSS = −10 μA (max) (VDS = −12 V) • Enhancement model: Vth = −0.5 to −1.2 V (VDS = −10 V, ID = −200 μA)
描述与应用东芝场效应晶体管硅P沟道MOS类型(U-MOS III) 笔记本电脑应用 便携式设备的应用 •低漏源导通电阻RDS(ON)= 22mΩ(典型值) •高正向转移导纳:| YFS|=14 S(典型值) •低漏电流:IDSS= -10μA(最大)(VDS=-12 V) •增强模式:Vth =-0.5〜-1.2 V (VDS= -10 V,ID= -200μA)
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