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AAT7157IAS-T1 Complex FET -20V -5.8A SOIC8/SOP8 marking MA battery-powered application protection
| 最大源漏极电压Vds Drain-Source Voltage | -20V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 12V |
| 最大漏极电流Id Drain Current | -5.8A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | 49Ω@ VGS=-2.5V, ID=-4.4A |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | -0.6V |
| 耗散功率Pd Power Dissipation | 2W |
| Description & Applications | P-Channel Power MOSFET General Description The AAT7157 low threshold 20V, dual P-Channel MOSFET is a member of AnalogicTech's TrenchDMOS product family. Using an ultra-high density proprietary TrenchDMOS technology the AAT7157 is designed for use as a load switch in battery powered applications and protection in battery packs. Applications • Battery Packs • Battery-powered portable equipment |
| 描述与应用 | P沟道功率MOSFET 概述 AAT7157低阈值20V，是双P沟道MOSFET AnalogicTech的TrenchDMOS产品系列的成员。使用一个超高密度的专有TrenchDMOS技术AAT7157是专为使用作为负载开关 在电池组中电池供电的应用和保护。 应用 •电池组 •电池供电的便携式设备 |
