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BC857BS PNP+PNP Complex Bipolar Transistor -50V -100mA HEF=200~450 SOT-363/SC-88 marking 3f switch and digital circuit application
|
V(BR) CBO Collector-Base Voltage |
-50V |
|
V(BR) CEO Collector-Emitter Voltage |
-45V |
| Collector Current(IC) | -100MA/-0.1A |
| Transtion Frequency(fT) | 100MHZ |
| DC Current Gain(hFE) | 200~450 |
|
VCE(sat) Collector-Emitter Saturation Voltage |
-0.4V |
| Power Dissipation (Pd) | 300MW/0.3W |
| Description & Applications | PNP general purpose double transistor
FEATURES
• Low collector capacitance
• Low collector-emitter saturation voltage
• Closely matched current gain
• Reduces number of components and boardspace
• No mutual interference between the transistors.
|
| Technical Documentation Download | Read Online |
