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2SA2021 PNP transistors(BJT) -60V -100mA/-0.1A 80MHz 180~390 -500mV/-0.5V sot-723 marking AR amplifier

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
-60V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
−50V
集电极连续输出电流IC
Collector Current(IC)
−100mA/-0.1A
截止频率fT
Transtion Frequency(fT)
80MHz
直流电流增益hFE
DC Current Gain(hFE)
180~390
管压降VCE(sat)
Collector-Emitter SaturationVoltage
−500mV/-0.5V
耗散功率Pc
PoWer Dissipation
100mW/0.1W
Description & ApplicationsPNP Silicon epitaxial planar type For general amplification Complementary to 2SC5609 Features • High foward current transfer ratio hFE • SSS-mini type package, allowing downsizing and thinning of the equipment and automatic insertion through the tape packing
描述与应用PNP硅外延平面型 对于一般的放大 互补型2SC5609 特点 •高电流传输比HFE FOWARD •SSS迷你型封装,允许裁员和通过磁带包装设备和自动插入变薄
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