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2SC4626J NPN Transistors(BJT) 30V 30mA 250MHz 70~220 SOT-523/SC-75 marking V high-frequency amplifier
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 30V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 20V |
集电极连续输出电流IC Collector Current(IC) | 30mA |
截止频率fT Transtion Frequency(fT) | 250MHz |
直流电流增益hFE DC Current Gain(hFE) | 70~220 |
管压降VCE(sat) Collector-Emitter Saturation Voltage | |
耗散功率Pc Power Dissipation | 125mW/0.125W |
Description & Applications | Features •Silicon NPN epitaxial planar type •For high-frequency amplification •Optimum for RF amplification of FM/AM radios •High transition frequency fT •SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing |
描述与应用 | 特点 •NPN硅外延平面型 •对于高频放大 •FM/ AM收音机,最适用于射频放大 •高转换频率fT •SS-迷你型包装,使瘦身的设备和通过自动插入磁带包装 |