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BC846ALT1G NPN Transistors(BJT) 80V 100mA/0.1A 100MHz 110~220 600mV/0.6V SOT-23/SC-59 marking 1A
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 80V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 65V |
| 集电极连续输出电流IC Collector Current(IC) | 100mA/0.1A |
| 截止频率fT Transtion Frequency(fT) | 100MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 110~220 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | 600mV/0.6V |
| 耗散功率Pc Power Dissipation | 330mW/0.33W |
| Description & Applications | General Purpose Transistors NPN Silicon Features • Moisture Sensitivity Level: 1 • ESD Rating − Human Body Model: >4000 V ESD Rating − Machine Model: >400 V • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant |
| 描述与应用 | 特点 •湿度敏感度等级：1 •ESD额定值 - 人体模型：>4000 V ESD额定值 - 机器型号：> 400 V •这些器件是无铅，无卤/ BFR免费，并符合RoHS标准 |
