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SCH2830 complex FET MOSFET+schottky diode -20V -1A 700mA/0.7A 0.48V SOT-563/SCH6 marking XF low on-resistance/ultra high-speed switch/short reverse recovery time/low forward voltage
| 最大源漏极电压Vds Drain-Source Voltage | P沟道 P-Channel |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | -20V |
| 最大漏极电流Id Drain Current | -10V |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | -1A |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 500mΩ@ VGS =-4V, ID =-500mA |
| 耗散功率Pd Power Dissipation | -0.4~-1.4V |
| Description & Applications | 肖特基二极管SBD Schottky Barrier Diodes |
| 描述与应用 | 30V |
