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UP0439000L NPN+PNP Complex Bipolar Transistor 50V/-50V 100mA/-100mA 80 SOT-563 marking 3V switch and digital circuit application
| Q1 Collector-Base Voltage(VCBO) | 50V |
| Q1Collector-Emitter Voltage(VCEO) | 50V |
| Q1 Collector Current(IC) | 100MA/0.1A |
| Q2 Collector-Base Voltage(VCBO) | -50V |
| Q2Collector-Emitter Voltage(VCEO) | -50V |
| Q2Collector Current(IC) | -100MA/-0.1A |
| Q1 Input Resistance(R1) | 4.7 kΩ |
| Q1Base-Emitter Resistance(R2) | 4.7kΩ |
| Q1(R1/R2) Q1 Resistance Ratio | 1 |
| Q2 Input Resistance(R1) | 10kΩ |
| Q2Base-Emitter Resistance(R2) | 4.7 kΩ |
| Q2(R1/R2) Q2 Resistance Ratio | 0.021 |
| DC Current Gain(hFE) Q1/Q2 | 80/80 |
| Transtion Frequency(fT) Q1/Q2 | 150MHZ/80MHZ |
| Power Dissipation | 125MW/0.125W |
| Description & Applications |
Silicon NPN epitaxial planar type (Tr1)
Silicon PNP epitaxial planar type (Tr2)
For switching/digital circuits
* Features
• Two elements incorporated into one package
(Transistors with built-in resistor)
• Reduction of the mounting area and assembly cost by one half
* Basic Part Number
• UNR1114 + UNR1213
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