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UNR51A1G0LS0 PNP Bipolar Digital Transistor (BRT) -50V -80mA 35 0.15W/150mW SOT-323/SC-70 marking CE switch inverter interface driver circuit

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Product description
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO)-50V
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO)-50V
集电极连续输出电流IC Collector Current(IC)-80mA
基极输入电阻R1 Input Resistance(R1)10KΩ/Ohm
基极-发射极输入电阻R2 Base-Emitter Resistance(R2)10KΩ/Ohm
电阻比(R1/R2) Resistance Ratio1
直流电流增益hFE DC Current Gain(hFE)35
截止频率fT Transtion Frequency(fT)80MHz
耗散功率Pc Power Dissipation0.15W/150mW
Description & Applications Features •Transistors with built-in Resistor •Silicon PNP epitaxial planer transistor •Costs can be reduced through downsizing of the equipment and reduction of the number of parts. •SMini type package allowing easy automatic insertion through tape packing
描述与应用特点 •内置电阻晶体管 •硅PNP外延刨床晶体管 •成本可以减少设备通过裁员和减少部件的数量。 •SMINI型封装,便于通过自动插入磁带包装
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