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UP04111GOL Complex Bipolar Transistor -50V -100mA R1=R2=10KΩ HEF=35 SOT563 MARKING 9U
V(BR) CBO Collector-Base Voltage |
-50V |
V(BR) CEO Collector-Emitter Voltage |
-50V |
Collector Current(IC) | -100MA |
Input Resistance(R1) | 10KΩ |
Base-Emitter Resistance(R2) | 10KΩ |
Base-Emitter Input Resistance Ratio (R1/R2) | 1 |
DC Current Gain(hFE) | 35 |
Transtion Frequency(fT) | 80MHZ |
Power Dissipation (Pd) | 125MW |
Description & Applications | For switching/digital circuits
Two elements incorporated into one package
(Transistors with built-in resistor)
• Reduction of the mounting area and assembly cost by one half
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Technical Documentation Download | Read Online |