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MA2J1110GL Switching Diodes 80V 100mA/0.1A SOD-323 marking 1B highspeed switch/fast reverse recovery time/high breakdown voltage
| 反向电压Vr Reverse Voltage | 80V |
| 平均整流电流Io Average Rectified Current | 100mA/0.1A |
| 最大正向压降VF Forward Voltage(Vf) | 1.2V |
| 反向恢复时间Trr Reverse Recovery Time | 3ns |
| 最大耗散功率Pd Power Dissipation | |
| Description & Applications | Silicon epitAxiAl plAnAr type For switching circuits FeAtures • SmAll S-mini type pAckAge, Allowing high-density mounting • Short reVerse recoVery time • SmAll terminAl cApAcitAnce, • High breAkdown VoltAge (VR = 80 |
| 描述与应用 | •硅外延平面型对于高速开关电路 •小s-mini型封装，使高密度安装 •短的反向恢复时间 •小端电容 •高击穿电压 VR = 80 |
