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UP0487800L Complex FET 50V 100mA/0.1A SOT-563 marking 7Y switch 2.5V drive
| 最大源漏极电压Vds Drain-Source Voltage | 50V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 7V |
| 最大漏极电流Id Drain Current | 100mA/0.1A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | 1200mΩ@ VGS = 4V, ID = 10mA |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.9~1.5V |
| 耗散功率Pd Power Dissipation | 125mW/0.125W |
| Description & Applications | Silicon N-channel MOSFET For switching ■ Features • Allowing 2.5 V drive • Incorporating a built-in gate protection-diode • Reduction of the mounting area and assembly cost by one half |
| 描述与应用 | 硅N沟道MOSFET 对于开关 ■特点 •允许2.5 V驱动器 •集成了内置栅极保护二极管 •减少安装面积和装配成本的一半 |
