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FDC658P MOSFET P-Channel -30V -4A 0.041ohm SOT-163 marking 658
| 最大源漏极电压Vds Drain-Source Voltage | -30V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | -4A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | 0.041Ω @-4A,-10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | -1--3V |
| 耗散功率Pd Power Dissipation | 1.6W |
| Description & Applications | • Rugged gate rating (±12V). • High performance trench technology for extremely low RDS(ON) • SuperSOT TM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick). |
| 描述与应用 | •坚固的门评级（±12V）。 •高性能沟道技术极低的RDS（ON） •的SuperSOT TM-6包装：占地面积小（小72％ 比标准的SO-8）;低调（1mm厚） |
