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MMBTA42 NPN Transistors(BJT) 300V 500mA/0.5A 50Mhz 25 500mV/0.5V SOT-23/SC-59 marking 7DW high voltage amplifier
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 300V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 300V |
集电极连续输出电流IC Collector Current(IC) | 500mA/0.5A |
截止频率fT Transtion Frequency(fT) | 50Mhz |
直流电流增益hFE DC Current Gain(hFE) | 25 |
管压降VCE(sat) Collector-Emitter Saturation Voltage | 500mV/0.5V |
耗散功率Pc Power Dissipation | 350mW/0.35W |
Description & Applications | FEATURES • SOT-23 Plastic-Encapsulate Transistors • High breakdown voltage • Low collector-emitter saturation voltage • Complementary to MMBTA92 (PNP) |
描述与应用 | 特点 •SOT-23塑料封装晶体管 •高击穿电压 •低集电极 - 发射极饱和电压 •互补MMBTA92(PNP) |