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RTQ035N03 MOSFET N-Channel 30V 2.5A SOT-323/SC-70/UMT3 marking QP

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Product description
最大源漏极电压Vds Drain-Source Voltage30V
最大栅源极电压Vgs(±) Gate-Source Voltage12V
最大漏极电流Id Drain Current2.5A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance0.067Ω/Ohm @2.5A,4.5V
开启电压Vgs(th) Gate-Source Threshold Voltage0.5-1.5V
耗散功率Pd Power Dissipation800mW/0.8W
Description & Applications2.5V Drive Nch MOS FET Silicon N-channel MOS FET Low On-resistance. Space saving−small surface mount package (TUMT3). Low voltage drive (2.5V drive).
描述与应用2.5V驱动N沟道MOS FET 硅N沟道MOS FET 低导通电阻。 节省空间的小型表面贴装封装(TUMT3)。 低电压驱动
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