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BF995FD-GS08 MOSFET N-Channel 20V 30mA SOT-143 marking MB fast switch/low on-resistance
| 最大源漏极电压Vds Drain-Source Voltage | 20V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | |
| 最大漏极电流Id Drain Current | 30mA |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 3.5V |
| 耗散功率Pd Power Dissipation | 200mW/0.2W |
| Description & Applications | N–Channel Dual Gate MOS-Fieldeffect Tetrode,Depletion Mode Applications Input- and mixer stages especially for FM- and VHF TV-tuners up to 300 MHz. Features Integrated gate protection diodes High cross modulation performance Low noise figure High AGC-range Low feedback capacitance |
| 描述与应用 | N沟道双栅MOS场效应四极管，耗尽模式 应用 输入和混频器的阶段，特别是调频和VHF电视调谐器，高达300 MHz。 特点 综合栅极保护二极管 高交叉调制性能 低噪声系数 高AGC范围 低反馈电容 |
