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BFG17A NPN Transistors(BJT) 25V 50mA 2.8GHz 20-150 SOT-143 marking EG antenna amplifier
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 25V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 15V |
| 集电极连续输出电流IC Collector Current(IC) | 50mA |
| 截止频率fT Transtion Frequency(fT) | 2.8GHz |
| 直流电流增益hFE DC Current Gain(hFE) | 20−150 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | |
| 耗散功率Pc Power Dissipation | 300mW/0.3W |
| Description & Applications | • NPN 3 GHz wideband transistor DESCRIPTION NPN wideband transistor in a microminiature plastic SOT143 surface mounting envelope with double emitter bonding. It is intended for use in wideband aerial amplifiers using SMD technology. |
| 描述与应用 | NPN3 GHz的宽带晶体管 说明 NPN宽带晶体管在 超小型塑料SOT143 表面安装信封 双发射粘接。 它的目的是用于在宽带 天线放大器采用SMD 技术。 |
