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mmbr911lt1 NPN Transistors(BJT) 20V 60mA 6Ghz 30~200 SOT-23/SC-59 marking 7p low noisehigh frequency transistor
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 20V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 12V |
| 集电极连续输出电流IC Collector Current(IC) | 60mA |
| 截止频率fT Transtion Frequency(fT) | 6Ghz |
| 直流电流增益hFE DC Current Gain(hFE) | 30~200 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | |
| 耗散功率Pc Power Dissipation | 333mW/0.333W |
| Description & Applications | The RF Line NPN Silicon High-Frequency TRANSISTOR Designed for low noise, wide dynamic range front–end amplifiers and low–noise VCO’s. Available in a surface–mountable plastic package. This Motorola small–signal plastic transistor offers superior quality and performance at low cost. |
| 描述与应用 | RF线NPN硅 高频三极管 专为低噪声，宽动态范围前端放大器 低噪声VCO。可在一个表面贴装塑料包装。这 摩托罗拉的小信号的塑料晶体管提供优异的质量和性能 成本低。 |
