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TPCP8901 NPN+PNP Complex Bipolar Transistor 100V/-50V 1A/-800mA 200~500/400~1000 PS-8 marking 8901 switch and digital circuit application
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 100V/-50V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 50V/-50V |
| 集电极连续输出电流IC Collector Current(IC) | 1A/-800mA |
| 截止频率fT Transtion Frequency(fT) | |
| 直流电流增益hFE DC Current Gain(hFE) | 200~500/400~1000 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | 170mV/-200mV |
| 耗散功率Pc Power Dissipation | 830mW |
| Description & Applications | Features • TOSHIBA Transistor Silicon NPN / PNP Epitaxial Type (PCT Process) • Small footprint due to small and thin package • High DC current gain : PNP hFE = 200 to 500 (IC = −0.1 A) :NPN hFE = 400 to 1000 (IC = 0.1 A) • Low collector-emitter saturation : PNP VCE (sat) = −0.20 V (max) : NPN VCE (sat) = 0.17 V (max) • High-speed switching : PNP tf = 70 ns (typ.) : NPN tf = 85 ns (typ.) • Portable Equipment Applications • Switching Applications |
| 描述与应用 | 特点 •东芝晶体管的硅NPN/ PNP外延型（PCT工艺） •由于占地面积小，小而薄的包装 •高直流电流增益：PNP HFE=200〜500（IC= -0.1）：NPN HFE=400至1000（IC=0.1 A） •低集电极 - 发射极饱和：PNP VCE（sat）=-0.20 V（最大值）：NPN VCE（sat）= 0.17 V（最大值） •高速开关：PNP TF=70 ns（典型值）：NPN TF=85 ns（典型值） •便携式设备的应用 •开关应用 |
