Scavenging browsing Mobile
Hot Search： SSM3K35MFV SSM3J36MFV 2SK3376TT-B
IRF5852TR Complex FET 20V 2.7A SOT-163/SOT23-6 marking EE ultra low on-resistance
| 最大源漏极电压Vds Drain-Source Voltage | 20V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 12V |
| 最大漏极电流Id Drain Current | 2.7A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | 120mΩ@ VGS = 2.5V, ID = 2.2A |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.6~1.25V |
| 耗散功率Pd Power Dissipation | 960mW/0.96W |
| Description & Applications | Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge |
| 描述与应用 | 超低导通电阻 双N沟道MOSFET 表面贴装 可在磁带和卷轴 低栅极电荷 |
