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SBT5401 PNP transistors(BJT) -160V -600mA/- 0.6A 100~400MHz 60~240 -200mV/-0.2V SOT-23/SC-59 marking NFN general amplifier

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
-160V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
−150V
集电极连续输出电流IC
Collector Current(IC)
−600mA/- 0.6A
截止频率fT
Transtion Frequency(fT)
100~400MHz
直流电流增益hFE
DC Current Gain(hFE)
60~240
管压降VCE(sat)
Collector-Emitter SaturationVoltage
−200mV/-0.2V
耗散功率Pc
PoWer Dissipation
200mW/0.2W
Description & ApplicationsPNP Silicon Transistor Description • General purpose amplifier • High voltage application Features • high collector breakdown voltage • Low collector saturation voltage • Complementary pair with SBT5551
描述与应用PNP硅晶体管 描述 •通用放大器 •高电压施加 特点 •高集电极击穿电压 •低集电极饱和电压 •互补配对SBT5551
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