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MMBT3906 PNP transistors（BJT） -40V -200mA/-0.2A 250MHz 100~300 -400mV/-0.4V SOT-23 marking H2A general amplifier
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -40V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | −40V |
| 集电极连续输出电流IC Collector Current(IC) | −200mA/-0.2A |
| 截止频率fT Transtion Frequency(fT) | 250MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 100~300 |
| 管压降VCE（sat） Collector-Emitter SaturationVoltage | -400mV/-0.4V |
| 耗散功率Pc PoWer Dissipation | 225mW/0.225W |
| Description & Applications | PNP epitaxial planar transistor PNP General Purpose Amplifier This device is designed for general purpose amplifier and switching applications at collector currents of 10 µA to 100 mA. |
| 描述与应用 | PNP外延平面晶体管 PNP通用放大器 这个装置是专为通用放大器和开关应用在集电极电流为10μA至100 mA的。 |
