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CPH6413 Complex FET 20V 5A SOT-163/SOT23-6/CPH6 marking KP ultra high-speed switch 2.5V drive
最大源漏极电压Vds Drain-Source Voltage | 20V |
最大栅源极电压Vgs(±) Gate-Source Voltage | 10V |
最大漏极电流Id Drain Current | 5A |
源漏极导通电阻Rds Drain-Source On-State Resistance | 54mΩ@ VGS = 2.5V, ID = 1.5A |
开启电压Vgs(th) Gate-Source Threshold Voltage | 0.4~1.3V |
耗散功率Pd Power Dissipation | 1.6W |
Description & Applications | N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed switching. · 2.5V drive. |
描述与应用 | N-沟道硅MOSFET 超高速开关应用 特点 ·低导通电阻。 ·超高速开关。 ·2.5V驱动器。 |