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VESD05A1B-HD1-GS08 TVS/ESD 5V 3A SOD882/LLP1006-2L marking OK
| 极性 Polarization | 单向 Unidirectional |
| 反向关断电压/工作电压VRWM Reverse Standoff Voltage | 5V |
| 反向击穿电压VBR Breakdown Voltage | 6.8V |
| 峰值脉冲耗散功率PPPM Peak Pulse Power Dissipation | 33W |
| 峰值脉冲电流IPPm Peak Forward Surge Current | 3A |
| 额定耗散功率Pd Power dissipation | |
| Description & Applications | FEATURES •Vishay Semiconductors •ESD-Protection Diode in LLP1006-2L •Ultra compact LLP1006-2L package •Low package height < 0.4 mm •1-line ESD-protection •Low leakage current < 0.1 μA •Low load capacitance CD = 12 pF(VR = 2.5 V; f = 1 MHz) •ESD-protection acc. IEC 61000-4-2 ± 30 kV contact discharge ± 30 kV air discharge •High surge current acc. IEC61000-4-5 IPP > 3 A •Pin plating NiPdAu (e4) no whisker growth •e4 - precious metal (e.g. Ag, Au, NiPd, NiPdAu) (no Sn) •Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC |
| 描述与应用 | 特点 •威世半导体 •LLP1006-2L的ESD保护二极管 •超小型LLP1006-2L封装 •低封装高度<0.4毫米 •1线ESD保护 •低漏电流小于0.1μA •低负载电容CD=12 PF（VR= 2.5 V，F =1兆赫） •ESD保护ACC。 IEC61000-4-2 ±30 kV接触放电 ±30 kV空气放电 •高浪涌电流符合。 IEC61000-4-5 IPP>3 A •引脚镀镍钯金（E4）无晶须生长E4 - 贵重金属（如银，金，镍钯，镍钯金）（无锡） •符合RoHS指令2002/95/EC，并符合WEEE 2002/96/EC |
