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BFP182W NPN Transistors(BJT) 20V 35mA 8Ghz 50~200 SOT-343 marking RG low noise，high gain wideband amplifier
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 20V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 12V |
| 集电极连续输出电流IC Collector Current(IC) | 35mA |
| 截止频率fT Transtion Frequency(fT) | 8Ghz |
| 直流电流增益hFE DC Current Gain(hFE) | 50~200 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | |
| 耗散功率Pc Power Dissipation | 250mW/0.25W |
| Description & Applications | NPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA fT = 8 GHz F = 1.2 dB at 900 MHz |
| 描述与应用 | NPN硅RF晶体管 低噪声，高增益宽带放大器集电极电流从1 mA到20 mA FT =8 GHz的 F =1.2分贝(在900 MHz时) |
