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2SJ133-Z-E1 power MOSFET P-Channel -60V 2A 0.45ohm SOT-252 marking J133 for switching
| 最大源漏极电压Vds Drain-Source Voltage | -60V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | -2A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | 0.45Ω -1A,-10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | -1.0--3.0V |
| 耗散功率Pd Power Dissipation | 20W |
| Description & Applications | MOS FIELD EFFECT POWER TRANSISTOR P-CHANNEL POWER MOSFET FOR SWITCHING Gate drive available at logic level (VGS = −4 V) High current control available in small dimension due to low RDS(on) (≅ 0.45 Ω) 2SJ133-Z is a lead process product and is ideal for mounting a hybrid IC |
| 描述与应用 | MOS场效应功率晶体管 P沟道功率MOSFET 用于开关 栅极驱动逻辑电平（VGS=-4 V） 高电流控制由于在小尺寸，低RDS（on）（≅0.45Ω） 2SJ133-Z是一款铅工艺产品，非常适合安装一个混合IC |
