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2SA1331 PNP transistors(BJT) -60V -150mA/-0.15A 100MHz 90~180 -100mV/-0.1V SOT-23/CP marking 4 high breakdown voltage

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
-60V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
−50V
集电极连续输出电流IC
Collector Current(IC)
−150mA/-0.15A
截止频率fT
Transtion Frequency(fT)
100MHz
直流电流增益hFE
DC Current Gain(hFE)
90~180
管压降VCE(sat)
Collector-Emitter SaturationVoltage
-100mV/-0.1V
耗散功率Pc
PoWer Dissipation
150mW/0.15W
Description & ApplicationsPNP/NPN epitaxial planar silicon transistors fast switching speed; high breakdown voltage
描述与应用PNP/ NPN外延平面硅晶体管 开关速度快; 击穿电压高
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