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HAT2204C n MOSFET 12V 3.5A SOT363 代码 VU Low on-resistance Low drive current

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Product description
Drain-Source Voltage (Vds)  12V

Vgs(±)

Gate-Source Voltage

 8V
Drain Current (Id)  3.5A
Drain-Source On-State (Rds)  RDS(on) = 26m Ω typ.(at VGS = 4.5 V)

Vgs (th)

Gate-Source Threshold Voltage

 
Power dissipation (Pd)  900MW
Description & Applications  Silicon N Channel MOS FET 
Power Switching 
 
• Low on-resistance 
RDS(on) = 26m Ω typ.(at VGS = 4.5 V) 
• Low drive current 
• High density mounting 
• 1.8 V gate drive device 
 
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