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SSM3K15TE MOSFET N-Channel 30V 100mA/0.1A SOT-623/TESM marking DP
| 最大源漏极电压Vds Drain-Source Voltage | 30V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 100mA/0.1A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 2.2Ω/Ohm @10A,4V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.8-1.5V |
| 耗散功率Pd Power Dissipation | 100mW/0.1W |
| Description & Applications | High-Speed Switching Applications Analog Switch Applications • Optimum for high-density mounting in small packages • Low ON-resistance : Ron = 4.0 Ω (max) (@VGS = 4 V) : Ron = 7.0 Ω (max) (@VGS = 2.5 V) |
| 描述与应用 | 高速开关应用 模拟开关应用 •最适用于高密度安装在小包装 •低导通电阻 ：RON =4.0Ω（最大值）（@ VGS=4 V） RON =7.0Ω（最大值）（@ VGS= 2.5 V） |
