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RT3P11M PNP+PNP Complex Bipolar Transistor -50V -100mA HEF=50 R1=R2=10KΩ SOT-363/SC-88 marking P11 switch and digital circuit application
|
V(BR) CBO Collector-Base Voltage |
-50V |
|
V(BR) CEO Collector-Emitter Voltage |
-50V |
| Collector Current(IC) | -100MA/-0.1A |
| Input Resistance(R1) | 10KΩ |
| Base-Emitter Resistance(R2) | 10KΩ |
| Base-Emitter Input Resistance Ratio (R1/R2) | 1 |
| DC Current Gain(hFE) | 50 |
| Transtion Frequency(fT) | 150MHZ |
| Power Dissipation （Pd） | 0.15W |
| Description & Applications | Composite Transistor With Resistor
For Switching Application
Silicon Epitaxial Type
RT3P11M is a composite transistor built with two
RT1P141 in SC-88 package.
Inverted circuit, switching circuit,
interface circuit, driver circuit
|
| Technical Documentation Download | Read Online |
