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FDG326P MOSFET P-Channel -20V -1.5A 0.105ohm SOT-363 marking 26
| 最大源漏极电压Vds Drain-Source Voltage | -20V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 8V |
| 最大漏极电流Id Drain Current | -1.5A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | 0.105Ω @-1.5A,-4.5V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | -0.4--1.5V |
| 耗散功率Pd Power Dissipation | 750mW/0.75W |
| Description & Applications | • Low gate charge (3.5nC typical). • High performance trench technology for extremely low RDS(ON) • Compact industry standard SC70-6 surface mount package. |
| 描述与应用 | •低栅极电荷（3.5nC典型值） •高性能沟道技术极低的RDS（ON） •紧凑型工业标准SC70-6表面贴装封装 |
