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2N7002/G MOSFET N-Channel 60V 300mA/0.3A SOT-23/SC-59 marking 1NW Suitable for logic level gate drive sources/fast switch

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Product description
最大源漏极电压Vds Drain-Source Voltage 60V
最大栅源极电压Vgs(±) Gate-Source Voltage 30V
最大漏极电流Id Drain Current 300mA/0.3A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance 2.8Ω/Ohm @500mA,10V
开启电压Vgs(th) Gate-Source Threshold Voltage 1-2.5V
耗散功率Pd Power Dissipation 830mW/0.83W
Description & Applications 60 V, 300 mA N-channel Trench MOSFET General description N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Trench MOSFET technology Features 60 V, 300 mA N-channel Trench MOSFET Suitable for logic level gate drive sources Very fast switching Surface-mounted package Trench MOSFET technology
描述与应用 60 V,300毫安N通道沟道MOSFET 一般说明 N沟道增强型场效应晶体管(FET)在一个塑料包装使用沟道MOSFET技术 特性 60 V,300毫安N通道沟道MOSFET 适用于逻辑电平栅极驱动源 开关速度非常快 表面贴装封装 沟道MOSFET技术
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