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2SC2411K NPN Transistors(BJT) 40V 500mA/0.5A 250MHz 180~390 600mV/0.6V SOT-23/SC-59/SMT3 marking CP
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) |
40V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) |
32V |
集电极连续输出电流IC Collector Current(IC) |
500mA/0.5A |
截止频率fT Transtion Frequency(fT) |
250MHz |
直流电流增益hFE DC Current Gain(hFE) |
180~390 |
管压降VCE(sat) Collector-Emitter Saturation Voltage |
600mV/0.6V |
耗散功率Pc Power Dissipation |
200mW/0.2W |
Description & Applications | Medium Power Transistor Features High IC Low VCE(sat). Optimal for low voltage operation. Complements the 2SA1036K. |
描述与应用 | 中等功率晶体管 特点 高IC 低VCE(sat)的低电压操作的最佳选择。 补充2SA1036K。 |