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2sd1758FTLR NPN Transistors(BJT) 40V 2A 100MHz 180~390 500mV/0.5V TO-252/CPT3 marking D1758

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
40V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
32V
集电极连续输出电流IC
Collector Current(IC)
2A
截止频率fT
Transtion Frequency(fT)
100MHz
直流电流增益hFE
DC Current Gain(hFE)
180~390
管压降VCE(sat)
Collector-Emitter Saturation Voltage
500mV/0.5V
耗散功率Pc
Power Dissipation
500mW/0.5W
Description & ApplicationsMedium Power Transistor (32V, 2A) Features *Low VCE(sat). VCE(sat) = 0.5V(Typ.) (IC / IB = 2A / 0.2A) Structure *Epitaxial planar type *NPN silicon transistor
描述与应用中等功率晶体管(32V,2A) 特点 *低VCE(SAT)。 VCE(饱和)= 0.5V (IC / IB=2A/0.2A) 结构 *外延平面型 * NPN硅的晶体管
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