GN01010NR2TD MESFET-N channel 6V 25mA-45mA SOT-143 marking 5AR RF application/low noise|Welcome to Eric Online Store - Shenzhen ERIC Electronics Co., Ltd.

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GN01010NR2TD MESFET-N channel 6V 25mA-45mA SOT-143 marking 5AR RF application/low noise

Model：GN01010NR2TD
Mark / screen / code / typing：5AR
Manufacturer：
Date Code：05+
Package：SOT-143
Standard Package：3000
Min Order：10

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Product description

最大源漏极电压Vds Drain-Source Voltage	6V
栅源极击穿电压V(BR)GS Gate-Source Voltage	-4V
漏极电流(Vgs=0V)IDSS Drain Current	25mA-45mA
关断电压Vgs(off) Gate-Source Cut-off Voltage
耗散功率Pd Power Dissipation	200mW/0.2W
Description & Applications	GaAs N-Channel MES For high-output high-gain amplification General-use wide-band amplifier Low noise With bandwidth control pin
描述与应用	砷化镓N沟道MES 用于高输出的高增益放大一般使用的宽带放大器低噪音随着带宽控制引脚

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