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KTD1898 NPN Transistors(BJT) 100V 1A 100MHz 70~400 400mV/0.4V SOT-89 marking ZO
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 100V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 80V |
集电极连续输出电流IC Collector Current(IC) | 1A |
截止频率fT Transtion Frequency(fT) | 100MHz |
直流电流增益hFE DC Current Gain(hFE) | 70~400 |
管压降VCE(sat) Collector-Emitter Saturation Voltage | 400mV/0.4V |
耗散功率Pc Power Dissipation | |
Description & Applications | 1W (Mounted on Ceramic Substrate). Small Flat Package. Complementary to KTB1260. |
描述与应用 | 1W(安装在陶瓷基板)。 小型扁平包装。 KTB1260互补。 |