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2SK1195 MOSFET N-Channel 230V 1.5A TO-252/D-PAK marking K1195 4V drive/The static Rds(on) is small/Built-in ZD for Gate Protection
| 最大源漏极电压Vds Drain-Source Voltage | 230V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 1.5A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 1.2Ω/Ohm @1.5A,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 2-4V |
| 耗散功率Pd Power Dissipation | 10W |
| Description & Applications | N-Channel Enhancement type Features N-Channel Enhancement type Applicable to 4V drive The static Rds(on) is small Built-in ZD for Gate Protection |
| 描述与应用 | N沟道增强型 特性 N沟道增强型 适用于4V驱动 静态的Rds（on）是小 内置ZD门保护 |
