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2SC6054JRL NPN Transistors(BJT) 60V 100mA/0.1A 100MHz 100mV/0.1V SOT-523/SC-75 marking 7MR general amplifier

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
60V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
50V
集电极连续输出电流IC
Collector Current(IC)
100mA/0.1A
截止频率fT
Transtion Frequency(fT)
100MHz
直流电流增益hFE
DC Current Gain(hFE)
管压降VCE(sat)
Collector-Emitter Saturation Voltage
100mV/0.1V
耗散功率Pc
Power Dissipation
125mW/0.125W
Description & ApplicationsSilicon NPN epitaxial planar type For general amplification * Features * High forward current transfer ratio hFE * SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing.
描述与应用NPN硅外延平面型 对于一般的放大 *特点 *高正向电流传输比HFE * SS-迷你型包装,使设备和自动减员 通过插入磁带包装。
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