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BCW61CLT1 PNP transistors(BJT) -32V -100mA/-0.1A 250~460 -250mV/-0.25V SOT-23/SC-59 marking BC
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | −32V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | −32V |
集电极连续输出电流IC Collector Current(IC) | −100mA/-0.1A |
截止频率fT Transtion Frequency(fT) | |
直流电流增益hFE DC Current Gain(hFE) | 250~460 |
管压降VCE(sat) Collector-Emitter SaturationVoltage | −250mV/-0.25V |
耗散功率Pc PoWer Dissipation | 300mW/0.3W |
Description & Applications | GENERAL PURPOSE TRANSISTOR |
描述与应用 | 通用晶体管 |